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oH VE S CO AV R M AI SIO PL LA N IA BL S NT E
TISP3070H3SL THRU TISP3115H3SL, TISP3125H3SL THRU TISP3210H3SL, TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
*R
TISP3XXXH3SL Overvoltage Protector Series
TISP3XXXH3SL Overview This TISP(R) device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The TISP3XXXH3SL protects R-G and T-G. In addition, the device is rated for simultaneous R-G and T-G impulse conditions. The TISP3XXXH3SL is available in a wide range of voltages and has a high current capability, allowing minimal series resistance to be used. These protectors have been specified mindful of the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950, EN 60950, IEC 60950, ITU-T K.20, K.21 and K.45. The TISP3350H3SL meets the FCC Part 68 "B" ringer voltage requirement and survives both Type A and B impulse tests. These devices are housed in a through-hole 3-pin single-in-line (SL) plastic package. Summary Electrical Characteristics
VDRM V(BO) VT @ IT V V V TISP3070H3 58 70 3 TISP3080H3 65 80 3 TISP3095H3 75 95 3 TISP3115H3 90 115 3 TISP3125H3 100 125 3 TISP3135H3 110 135 3 TISP3145H3 120 145 3 TISP3180H3 145 180 3 TISP3210H3 160 210 3 TISP3250H3 190 250 3 TISP3290H3 220 290 3 TISP3350H3 275 350 3 Bourns part has an improved protection voltage Part # IDRM A 5 5 5 5 5 5 5 5 5 5 5 5 I(BO) mA 600 600 600 600 600 600 600 600 600 600 600 600 IT A 5 5 5 5 5 5 5 5 5 5 5 5 IH mA 150 150 150 150 150 150 150 150 150 150 150 150 Co @ -2 V pF 140 140 140 74 74 74 74 74 74 62 62 62 Functionally Replaces P1402AC P1602AC P2202AC
P2702AC P3002AC P3602AC P4202AC P4802AC P6002AC
Summary Current Ratings
Parameter Waveshape Value 2/10 500 1.2/50, 8/20 300 10/160 250 ITSP A 5/320 200 10/560 130 10/1000 100 ITSM A 1 cycle 60 Hz 60 di/dt A/s 2/10 Wavefront 400
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex JANUARY 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3XXXH3SL Overvoltage Protector Series
ITU-T K.20/21 Rating . . . . . . . . 8 kV 10/700, 200 A 5/310 Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
Device `3070 `3080 `3095 `3115 `3125 `3135 `3145 `3180 `3210 `3250 `3290 `3350 VDRM V 58 65 75 90 100 110 120 145 160 190 220 275 V(BO) V 70 80 95 115 125 135 145 180 210 250 290 350
SL Package (Top View)
T G R
1 2 3
MDXXAGA
Device Symbol
T R
SD3XAA
Rated for International Surge Wave Shapes - Single and Simultaneous Impulses
Waveshape 2/10 s 8/20 s 10/160 s 10/700 s 10/560 s 10/1000 s Standard GR-1089-CORE IEC 61000-4-5 FCC Part 68 FCC Part 68 ITU-T K.20/21 FCC Part 68 GR-1089-CORE ITSP A 500 300 250 200
G Terminals T, R and G correspond to the alternative line designators of A, B and C
3-Pin Through-Hole Packaging - Compatible with TO-220AB pin-out - Low Height ................................................................... 8.3mm Low Differential Capacitance ...................................... < 67 pF
160 100
.............................................. UL Recognized Component
Description
The TISP3XXXH3SL limits overvoltages between the telephone line Ring and Tip conductors and Ground. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. The protector consists of two symmetrical voltage-triggered bidirectional thyristors. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides.
How To Order
For Standard Termination Finish Order As TISP3XXXH3SL For Lead Free Termination Finish Order As TISP3XXXH3SL-S
Device TISP3xxxH3
Package SL (Single-in-Line)
Carrier Tube
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc.
This TISP3XXXH3SL range consists of twelve voltage variants to meet various maximum system voltage levels (58 V to 275 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high current protection devices are in a 3-pin single-in-line (SL) plastic package and are supplied in tube pack. For alternative impulse rating, voltage and holding current values in SL packaged protectors, consult the factory. For lower rated impulse currents in the SL package, the 35 A 10/1000 TISP3xxxF3SL series is available. These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation.
JANUARY 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3XXXH3SL Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
Rating `3070 `3080 `3095 `3115 `3125 `3135 `3145 `3180 `3210 `3250 `3290 `3350 Symbol Value 58 65 75 90 100 110 120 145 160 190 220 275 500 300 250 220 200 200 200 200 160 100 55 60 1 400 -40 to +150 -65 to +150 Unit
Repetitive peak off-state voltage, (see Note 1)
VDRM
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 8/20 s (IEC 61000-4-5, 1.2/50 s voltage, 8/20 current combination wave generator) 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 5/200 s (VDE 0433, 10/700 s voltage wave shape) 0.2/310 s (I3124, 0.5/700 s voltage wave shape) 5/310 s (ITU-T K.20/21, 10/700 s voltage wave shape) 5/310 s (FTZ R12, 10/700 s voltage wave shape) 5/320 s (FCC Part 68, 9/720 s voltage wave shape) 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and 5) 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A Junction temperature Storage temperature range
ITSP
A
ITSM diT/dt TJ Tstg
A A/s C C
NOTES: 1. See Figure 9 for voltage values at lower temperatures. 2. Initially the TISP3XXXH3SL must be in thermal equilibrium. 3. These non-repetitive rated currents are peak values of either polarity. The rated current values may be applied to the R or T terminals. Additionally, both R and T terminals may have their rated current values applied simultaneously (in this case the G terminal return current will be the sum of the currents applied to the R and T terminals). The surge may be repeated after the TISP3XXXH3SL returns to its initial conditions. 4. See Figure 10 for impulse current ratings at other temperatures. Above 85 C, derate linearly to zero at 150 C lead temperature. 5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 8 for the current ratings at other durations. Figure 8 shows the R and T terminal current rating for simultaneous operation. In this condition, the G terminal current will be 2xITSM(t), the sum of the R and T terminal currents. Derate current values at -0.61 %/C for ambient temperatures above 25 C.
JANUARY 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3XXXH3SL Overvoltage Protector Series
Electrical Characteristics for the R and G or T and G Terminals, TA = 25 C (Unless Otherwise Noted)
Parameter Repetitive peak offstate current Test Conditions VD = VDRM TA = 25 C TA = 85 C `3070 `3080 `3095 `3115 `3125 `3135 `3145 `3180 `3210 `3250 `3290 `3350 `3070 `3080 `3095 `3115 `3125 `3135 `3145 `3180 `3210 `3250 `3290 `3350 0.15 0.15 5 10 170 90 84 150 79 67 140 74 62 73 35 28 33 26 Min Typ Max 5 10 70 80 95 115 125 135 145 180 210 250 290 350 78 88 103 124 134 144 154 189 220 261 302 362 0.6 3 0.6 Unit A
IDRM
V(BO)
Breakover voltage
dv/dt = 750 V/ms,
RSOURCE = 300
V
V(BO)
Impulse breakover voltage
dv/dt 1000 V/s, Linear voltage ramp, Maximum ramp value = 500 V di/dt = 20 A/s, Linear current ramp, Maximum ramp value = 10 A
V
I(BO) VT IH dv/dt ID
Breakover current On-state voltage Holding current Critical rate of rise of off-state voltage Off-state current
dv/dt = 750 V/ms, RSOURCE = 300 IT = 5 A, tW = 100 s IT = 5 A, di/dt = - /+30 mA/ms Linear voltage ramp, Maximum ramp value < 0.85VDRM VD = 50 V f = 100 kHz, Vd = 1 V rms, VD = 0, TA = 85 C `3070 thru `3115 `3125 thru `3210 `3250 thru `3350 `3070 thru `3115 `3125 thru `3210 `3250 thru `3350 `3070 thru `3115 `3125 thru `3210 `3250 thru `3350 `3070 thru `3115 `3125 thru `3210 `3250 thru `3350 `3125 thru `3210 `3250 thru `3350
A V A kV/s A
f = 100 kHz, Vd = 1 V rms, VD = -1 V
Coff
Off-state capacitance
f = 100 kHz, Vd = 1 V rms, VD = -2 V
pF
f = 100 kHz, Vd = 1 V rms, VD = -50 V
f = 100 kHz, Vd = 1 V rms, VD = -100 V (see Note 6) NOTE 6: To avoid possible voltage clipping, the `3125 is tested with VD = -98 V.
JANUARY 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3XXXH3SL Overvoltage Protector Series
Electrical Characteristics for the R and T Terminals, TA = 25 C (Unless Otherwise Noted)
Parameter Repetitive peak offstate current Test Conditions VD = 2VDRM `3070 `3080 `3095 `3115 `3125 `3135 `3145 `3180 `3210 `3250 `3290 `3350 `3070 `3080 `3095 `3115 `3125 `3135 `3145 `3180 `3210 `3250 `3290 `3350 Min Typ Max 5 140 160 190 230 250 270 290 360 420 500 580 700 156 176 206 248 268 288 308 378 440 522 604 724 Unit A
IDRM
V(BO)
Breakover voltage
dv/dt = 750 V/ms, RSOURCE = 300
V
V(BO)
Impulse breakover voltage
dv/dt 1000 V/s, Linear voltage ramp, Maximum ramp value = 500 V di/dt = 20 A/s, Linear current ramp, Maximum ramp value = 10 A
V
Thermal Characteristics
Parameter RJA Junction to free air thermal resistance Test Conditions EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 C, (see Note 7) Min Typ Max 50 Unit C/W
NOTE
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
JANUARY 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3XXXH3SL Overvoltage Protector Series
Parameter Measurement Information
+i ITSP Quadrant I Switching Characteristic
ITSM IT VT IH V(BO) I(BO)
-v IDRM
VDRM
VD
ID ID VD VDRM
IDRM +v
I(BO) V(BO)
IH VT IT ITSM
Quadrant III Switching Characteristic ITSP -i VD = 50 V and ID = 10 A used for reliability release
PM4XAAC
Figure 1. Voltage- current Characteristic for Terminal Pairs
JANUARY 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3XXXH3SL Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT vs JUNCTION TEMPERATURE NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC4HAF
100 VD = 50 V
TCHAG
1.10
Normalized Breakover Voltage
10 |ID| - Off-State Current - A
1.05
1
0*1
1.00
0*01
0*001 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
0.95 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
Figure 2.
Figure 3.
200 150 100 70 IT - On-State Current - A 50 40 30 20 15 10 7 5 4 3 2 1.5 1 0.7
ON-STATE CURRENT vs ON-STATE VOLTAGE
TC7AJ
2.0
NORMALIZED HOLDING CURENT vs JUNCTION TEMPERATURE
TC4HAD
TA = 25 C tW = 100 s Normalized Holding Current '3070 THRU '3115 1.5 2 3 45 VT - On-State Voltage - V 7 10
1.5
1.0 0.9 0.8 0.7 0.6 0.5 0.4
'3125 THRU '3210
'3250 THRU '3350 1
-25
0 25 50 75 100 125 TJ - Junction Temperature - C
150
Figure 4.
Figure 5.
JANUARY 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
.
TISP3XXXH3SL Overvoltage Protector Series
Typical Characteristics
NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE DIFFERENTIAL OFF-STATE CAPACITANCE vs RATED REPETITIVE PEAK OFF-STATE VOLTAGE
'3070 '3080
'3095
'3115
'3250
'3125 '3135 '3145
C - Differential Off-State Capacitance - pF
0.8
Capacitance Normalized to VD = 0
TJ = 25 C Vd = 1 Vrms
70 65 60 55 50 45 40 35 30 50
0.7 0.6 0.5 '3070 THRU '3115 0.4
DC = Coff(-2 V) - Coff(-50 V)
0.3
'3125 THRU '3210 '3250 THRU '3350
0.2 0.5
1
2
3 5 10 20 30 VD - Off-state Voltage - V
50
100 150
60 70 80 90100 150 200 250 300 VDRM - Repetitive Peak Off-State Voltage - V
Figure 6.
Figure 7.
JANUARY 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
'3180 '3210
0.9
'3290 '3350
TC7XAN
1
TC7HAK
75
TISP3XXXH3SL Overvoltage Protector Series
Typical Characteristics
NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION TI4HACA
ITSM(t) - Non-Repetitive Peak On-State Current - A
20 15 10 9 8 7 6 5 4 3 2 1.5 1 0*1 VGEN = 600 V rms, 50/60 Hz RGEN = 1.4*VGEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB, TA = 25 C SIMULTANEOUS OPERATION OF R AND T TERMINALS. G TERMINAL CURRENT = 2xITSM(t)
1
10 100 t - Current Duration - s
1000
Figure 8.
1.00 0.99 0.98
VDRM DERATING FACTOR vs MINIMUM AMBIIENT TEMPERATURE
TC7HAM
700 600 500 400 Impulse Current - A 300 250 200 150 '3125 THRU '3210
IMPULSE RATING vs AMBIENT TEMPERATURE
TC4HAA
BELLCORE 2/10
IEC 1.2/50, 8/20
Derating Factor
0.97 '3070 THRU '3115 0.96 0.95 0.94 '3250 THRU '3350 0.93 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 TAMIN - Minimum Ambient Temperature - C
FCC 10/160 ITU-T 10/700 FCC 10/560
120 BELLCORE 10/1000 100 90 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80
TA - Ambient Temperature - C
Figure 9. .
Figure 10.
JANUARY 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3XXXH3SL Overvoltage Protector Series
APPLICATIONS INFORMATION
Impulse Testing
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms. The table below shows some common values.
Standard
Peak Voltage Setting V
Voltage Waveform s 2/10 10/1000 10/160 10/560 9/720 9/720 0.5/700
Peak Current Value A
Current Waveform s
TISP3xxxH3 25 C Rating A
Series Resistance
2500 500 2/10 500 0 1000 100 10/1000 100 1500 200 10/160 250 0 800 100 10/560 160 0 FCC Part 68 (March 1998) 1500 37.5 5/320 200 0 1000 25 5/320 200 0 I3124 1500 37.5 0.2/310 200 0 37.5 1500 5/310 200 0 ITU-T K.20/K.21 10/700 4000 100 FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator GR-1089-CORE
If the impulse generator current exceeds the protector's current rating, then a series resistance can be used to reduce the current to the protector's rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following calculations. First, the minimum total circuit impedance is found by dividing the impulse generator's peak voltage by the protector's rated current. The impulse generator's fictitious impedance (generator's peak voltage divided by peak short circuit current) is then subtracted from the minimum total circuit impedance to give the required value of series resistance. In some cases, the equipment will require verification over a temperature range. By using the rated waveform values from Figure 10, the appropriate series resistor value can be calculated for ambient temperatures in the range of -40 C to 85 C.
AC Power Testing
The protector can withstand the G return currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are overcurrent protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere. In some cases, it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The current versus time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases, there may be a further time limit imposed by the test standard (e.g. UL 1459 wiring simulator failure).
Capacitance
The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V, -2 V, and -50 V. Where possible, values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance value by the factor given in Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capacitance is strongly dependent on connection inductance. In many applications, the typical conductor bias voltages will be about -2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V.
Normal System Voltage Levels
The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating the ring trip circuit. Figure 9 allows the calculation of the protector V DRM value at temperatures below 25 C. The calculated value should not be less than the maximum normal system voltages. The TISP3290H3, with a VDRM of 220 V, can be used for the protection of ring generators producing 105 V rms of ring on a battery voltage of -58 V. The peak ring voltage will be 58 + 1.414*105 = 206.5 V. However, this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage.
JANUARY 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3XXXH3SL Overvoltage Protector Series
APPLICATIONS INFORMATION
Normal System Voltage Levels (continued)
For the extreme case of an unconnected line, the temperature at which clipping begins can be calculated using the data from Figure 9. To possibly clip, the VDRM value has to be 206.5 V. This is a reduction of the 220 V 25 C VDRM value by a factor of 206.5/220 = 0.94. Figure 9 shows that a 0.94 reduction will occur at an ambient temperature of -32 C. In this example, the TISP3290H3 will allow normal equipment operation, even on an open-circuit line, provided that the minimum expected ambient temperature does not fall below -32 C.
JESD51 Thermal Measurement Method
To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard (JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board) horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for packages smaller than 27 mm (1.06 ") on a side and the other for packages up to 48 mm (1.89 "). The thermal measurements used the smaller 76.2 mm x 114.3 mm (3.0 " x 4.5 ") PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal resistance) and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance and so can dissipate higher power levels than indicated by the JESD51 values.
JANUARY 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3XXXH3SL Overvoltage Protector Series
MECHANICAL DATA
SL003 3-pin Plastic Single-in-line Package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
DIMENSIONS ARE: METRIC (INCHES)
SL003
9.25 - 9.75 (0.364 - 0.384)
3.20 - 3.40 (0.126 - 0.134)
Index Notch
8.31 (0.327) MAX. 12.9 (0.492) MAX.
6.10 - 6.60 (0.240- 0.260)
4.267 (0.168) MIN.
1
2
3
2.54 Typical (0.100) (See Note A) 2 Places 0.203 - 0.356 (0.008- 0.014)
1.854 (0.073) MAX. 0.559 - 0.711 (0.022 - 0.028) 3 Places
MDXXCE
NOTES: A. Each pin centerline is located within 0.25 (0.010) of its true longitudinal position. B. Body molding flash of up to 0.15 (0.006) may occur in the package lead plane.
"TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries.
JANUARY 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.

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